FDG6302P_Q
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FDG6302P_Q datasheet
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МаркировкаFDG6302P_Q
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ПроизводительFairchild Semiconductor
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ОписаниеFairchild Semiconductor FDG6302P_Q Configuration: Dual Continuous Drain Current: - 0.14 A Drain-source Breakdown Voltage: - 25 V Fall Time: 8 ns Forward Transconductance Gfs (max / Min): 0.12 S Gate-source Breakdown Voltage: - 8 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SC-70-6 Power Dissipation: 0.3 W Product Category: MOSFET Resistance Drain-source Rds (on): 10 Ohms Rise Time: 8 ns Transistor Polarity: P-Channel Typical Turn-off Delay Time: 9 ns Drain-Source Breakdown Voltage: - 25 V Gate-Source Breakdown Voltage: - 8 V Resistance Drain-Source RDS (on): 10 Ohms Forward Transconductance gFS (Max / Min): 0.12 S Typical Turn-Off Delay Time: 9 ns
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Количество страниц13 шт.
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Форматы файлаHTML, PDF
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